Manufacturer Part Number
BSC889N03LSG
Manufacturer
Infineon Technologies
Introduction
The BSC889N03LSG is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS 3 series.
Product Features and Performance
30V drain-to-source voltage (Vdss)
±20V maximum gate-to-source voltage (Vgs)
9mΩ maximum on-resistance (Rds(on)) at 30A, 10V
13A continuous drain current (Id) at 25°C ambient temperature
45A continuous drain current (Id) at 25°C case temperature
1300pF maximum input capacitance (Ciss) at 15V
5W maximum power dissipation at 25°C ambient temperature
28W maximum power dissipation at 25°C case temperature
MOSFET technology with N-channel configuration
2V maximum gate threshold voltage (Vgs(th)) at 250A
Product Advantages
High efficiency and low power losses
Compact surface-mount package
Wide temperature range operation (-55°C to 150°C)
Optimized for high-frequency switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 9mΩ @ 30A, 10V
Continuous drain current (Id): 13A (Ta), 45A (Tc)
Input capacitance (Ciss): 1300pF @ 15V
Power dissipation: 2.5W (Ta), 28W (Tc)
Gate threshold voltage (Vgs(th)): 2.2V @ 250A
Quality and Safety Features
RoHS3 compliant
Meets high-quality manufacturing standards
Compatibility
Suitable for a wide range of high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
DC-DC converters
Switched-mode power supplies
Product Lifecycle
Currently in production
No plans for discontinuation at this time
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Compact surface-mount package for space-constrained designs
Wide temperature range operation for versatile application use
Optimized for high-frequency switching applications
Meets RoHS3 compliance for environmentally-friendly designs