Manufacturer Part Number
BSC884N03MSG
Manufacturer
Infineon Technologies
Introduction
The BSC884N03MSG is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the OptiMOS series and is designed for a wide range of power electronics applications.
Product Features and Performance
High current capability: Continuous drain current of 17A at 25°C (Ta) and 85A at case temperature (Tc)
Low on-resistance: Maximum RDS(on) of 4.5mΩ @ 30A, 10V
Wide operating temperature range: -55°C to 150°C
High drain-source voltage: 34V
Low gate-source voltage: ±20V
Low input capacitance: 2700pF @ 15V
High power dissipation: 2.5W (Ta), 50W (Tc)
Product Advantages
Excellent efficiency and power density
Robust and reliable performance
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 34V
Gate-Source Voltage (Vgs max): ±20V
On-Resistance (RDS(on) max): 4.5mΩ @ 30A, 10V
Continuous Drain Current (ID): 17A (Ta), 85A (Tc)
Input Capacitance (Ciss max): 2700pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust package design (8-PowerTDFN) for reliable performance
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting systems
Industrial automation
Telecommunications equipment
Product Lifecycle
The BSC884N03MSG is a current production device, and there are no plans for discontinuation at this time.
Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
High current handling capability
Excellent efficiency and power density
Low on-resistance for improved energy efficiency
Wide operating temperature range for versatile applications
Robust and reliable performance for long-term use
RoHS3 compliance for environmentally-friendly applications
