Manufacturer Part Number
BSC883N03LSG
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
ROHS3 Compliant
Surface Mount Packaging
8-PowerTDFN Package
OptiMOS 3 Series
Bulk Packaging
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 34V
Maximum Gate-Source Voltage (Vgs): ±20V
Drain-Source On-Resistance (Rds(on)): 3.8mΩ @ 30A, 10V
MOSFET Technology
Continuous Drain Current (Id): 17A (Ta), 98A (Tc)
Input Capacitance (Ciss): 2800pF @ 15V
Power Dissipation: 2.5W (Ta), 57W (Tc)
N-Channel FET
Threshold Voltage (Vgs(th)): 2.2V @ 250A
Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg): 34nC @ 10V
Product Advantages
High performance and efficiency
Wide operating temperature range
Low on-resistance for high current handling
Compact surface mount package
Key Technical Parameters
Voltage, Current, Resistance, Capacitance, Temperature
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for a variety of power electronics and switching applications
Application Areas
Power supplies, motor drives, inverters, converters, and other power electronics
Product Lifecycle
Currently available, no discontinuation information
Key Reasons to Choose
High performance and efficiency
Wide operating temperature range
Low on-resistance for high current handling
Compact surface mount package
ROHS3 compliance for environmental safety
