Manufacturer Part Number
BSC0902NSIATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a single N-channel MOSFET transistor from the OptiMOS series.
Product Features and Performance
30V drain-to-source voltage
8mΩ maximum on-resistance at 30A, 10V
23A continuous drain current at 25°C ambient temperature
48W maximum power dissipation at 25°C case temperature
1500pF maximum input capacitance at 15V
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact 8-PowerTDFN package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.8mΩ @ 30A, 10V
Continuous drain current (Id): 23A @ 25°C ambient, 100A @ 25°C case
Input capacitance (Ciss): 1500pF @ 15V
Power dissipation: 2.5W @ 25°C ambient, 48W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and applications.
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Automotive applications
Product Lifecycle
This product is an active and readily available part from Infineon Technologies. Replacement or upgraded options may become available in the future.
Key Reasons to Choose
Excellent efficiency due to low on-resistance
High current handling capability
Compact and thermally efficient package
Reliable performance across wide temperature range
Compliance with RoHS3 regulations