Manufacturer Part Number
BSC0906NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor designed for power management and control applications.
Product Features and Performance
Optimized for efficient power conversion and control
Low on-state resistance for low power loss
High current handling capability up to 63A
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent thermal performance and power dissipation
Robust design for reliable operation
Optimized for high-efficiency power conversion
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-state Resistance (Rds(on)): 4.5mΩ
Continuous Drain Current (Id): 18A (Ta), 63A (Tc)
Input Capacitance (Ciss): 870pF
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for high-quality performance
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or upgrades
Key Reasons to Choose This Product
Excellent power efficiency and low power loss
High current handling capability
Wide operating temperature range
Robust and reliable design
Optimized for high-efficiency power conversion applications
