Manufacturer Part Number
BSC0901NSATMA1
Manufacturer
Infineon Technologies
Introduction
This is a single N-Channel MOSFET transistor from Infineon Technologies' OptiMOS series, designed for high-power applications.
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
9mOhm maximum On-Resistance (Rds(on)) at 30A, 10V
28A continuous Drain Current (Id) at 25°C ambient temperature (Ta)
100A continuous Drain Current (Id) at 25°C case temperature (Tc)
2800pF maximum Input Capacitance (Ciss) at 15V
5W Power Dissipation at 25°C ambient temperature (Ta)
69W Power Dissipation at 25°C case temperature (Tc)
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact PowerTDFN package for space-saving designs
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
N-Channel MOSFET technology
2V maximum Gate Threshold Voltage (Vgs(th)) at 250A
5V to 10V Drive Voltage range
44nC maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in Tape & Reel packaging
Compatibility
Suitable for various high-power, high-frequency switching applications such as power supplies, motor drives, and industrial control systems.
Application Areas
Power conversion
Motor control
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High power handling capability
Compact packaging for space-saving designs
Suitable for high-frequency, high-power switching applications
RoHS3 compliance for environmental responsibility
Availability of replacement or upgrade options from the manufacturer
