Manufacturer Part Number
BSC059N04LS6ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET designed for high-efficiency applications
Product Features and Performance
Low on-resistance for low conduction losses
High power density with small package size
Fast switching for high-frequency operation
Optimized for hard-switching and soft-switching topologies
Excellent thermal properties for high power dissipation
Product Advantages
Minimized power losses
Increased power density
Improved efficiency
Enhanced thermal management
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Max Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.9mΩ @ 50A, 10V
Continuous Drain Current (Id): 17A (Ta), 49A (Tc), 59A (Tc)
Input Capacitance (Ciss): 830pF @ 20V
Power Dissipation: 3W (Ta), 38W (Tc)
Gate Charge (Qg): 9.4nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 175°C)
Compatibility
Surface mount package (PG-TDSON-8-6)
Suitable for various high-efficiency power conversion applications
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial automation
Telecommunications equipment
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available from Infineon
Several Key Reasons to Choose This Product
Excellent performance-to-size ratio with low on-resistance and high power density
Optimized for high-efficiency, high-frequency power conversion applications
Robust design and wide operating temperature range
Seamless integration into various power systems
Reliable and long-lasting performance backed by Infineon's reputation
