Manufacturer Part Number
BSC059N04LSGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET in PowerTDFN package for high-power density applications
Product Features and Performance
Very low on-resistance and low gate charge for high efficiency
Optimized for high-frequency switching
Suitable for high-current, high-voltage applications
Product Advantages
Excellent thermal performance
Robust and reliable design
Compact and space-saving package
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 5.9 mΩ @ 50 A, 10 V
Current Continuous Drain (Id) @ 25°C: 16 A (Ta), 73 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 20 V
Power Dissipation (Max): 2.5 W (Ta), 50 W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Suitable for high-power, high-frequency switching applications
Application Areas
Power supplies
Motor drives
Power conversion systems
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact and space-saving package
Robust and reliable design
Suitable for high-power, high-frequency switching applications
