Manufacturer Part Number
BSC057N08NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with very low on-resistance and fast switching characteristics.
Product Features and Performance
80V drain-source voltage rating
Extremely low on-resistance (5.7mΩ @ 50A, 10V)
High continuous drain current (16A at 25°C, 100A at Tc)
Fast switching performance with low gate charge (56nC @ 10V)
Wide operating temperature range (-55°C to +150°C)
Suitable for high-frequency and high-efficiency power conversion applications
Product Advantages
Excellent efficiency and thermal performance
Compact and space-saving package
Reliable and stable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.7mΩ @ 50A, 10V
Drain Current (Id): 16A (Ta), 100A (Tc)
Input Capacitance (Ciss): 3900pF @ 40V
Power Dissipation: 2.5W (Ta), 114W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power electronics and power conversion systems
Application Areas
Switch-mode power supplies
Motor drives
Wireless power transmission
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Fast switching and low gate charge for high-frequency operation
Compact and space-saving package for easy integration
Reliable and stable operation across wide temperature range
Suitable for a variety of power electronics and power conversion applications
