Manufacturer Part Number
BSC050N03LSGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with low on-resistance and fast switching for efficient power conversion in industrial, consumer, and automotive applications.
Product Features and Performance
Extremely low on-resistance of 5 mΩ (max) at 30 A, 10 V
Fast switching with low gate charge of 35 nC (max) at 10 V
High current capability of 18 A (Ta) and 80 A (Tc)
Wide operating temperature range of -55°C to 150°C
Compact 8-pin PowerTDFN package for high power density
Product Advantages
Improved energy efficiency in power conversion applications
Reduced power losses and heat generation
Compact and space-saving design
Reliable operation across a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 5 mΩ (max) at 30 A, 10 V
Input Capacitance (Ciss): 2800 pF (max) at 15 V
Power Dissipation: 2.5 W (Ta), 50 W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of industrial, consumer, and automotive applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Lighting ballasts
General-purpose power switching
Product Lifecycle
Currently in active production
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
High current capability and fast switching for efficient power conversion
Compact and space-saving design
Wide operating temperature range for reliable performance
High-quality and RoHS-compliant design for safety and compliance
