Manufacturer Part Number
BSC0503NSIATMA1
Manufacturer
Infineon Technologies
Introduction
This is a single N-Channel MOSFET transistor from Infineon's OptiMOS series.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
3mOhm On-State Resistance (Rds(on)) at 30A, 10V
1300pF Input Capacitance (Ciss) at 15V
22A Continuous Drain Current (Id) at 25°C ambient
88A Continuous Drain Current (Id) at 25°C case
5W Power Dissipation at 25°C ambient
36W Power Dissipation at 25°C case
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-state resistance for high efficiency
High current handling capability
Wide temperature range
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
2V Threshold Voltage (Vgs(th)) at 250A
20nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
PG-TDSON-8-6 Packaging
Compatibility
Surface mount package
Application Areas
Power conversion
Motor control
Inverters
Switching power supplies
Product Lifecycle
This product is currently available, with no indication of discontinuation.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling for demanding applications
Wide temperature range for robust operation
Compact, surface mount package for space-constrained designs
RoHS compliance for environmental responsibility
