Manufacturer Part Number
BSC047N08NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel PowerMOS transistor in PG-TDSON-8-1 package for high-efficiency power applications
Product Features and Performance
80V Drain-Source Voltage (Vdss)
7mΩ On-Resistance (Rds(on)) at 50A, 10V
18A Continuous Drain Current (Id) at 25°C Ambient Temperature
100A Continuous Drain Current (Id) at 25°C Case Temperature
4800pF Input Capacitance (Ciss) at 40V
5W Power Dissipation at 25°C Ambient Temperature
125W Power Dissipation at 25°C Case Temperature
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance
Robust and reliable design
Key Technical Parameters
N-Channel MOSFET
80V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
5V Gate Threshold Voltage (Vgs(th)) at 90A Drain Current
6V / 10V Drive Voltage (Min Rds(on), Max Rds(on))
69nC Gate Charge (Qg) at 10V Gate-Source Voltage
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for a wide range of high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Industrial power electronics
Automotive electronics
Product Lifecycle
The BSC047N08NS3GATMA1 is an active and widely available product from Infineon Technologies. There are no plans for discontinuation, and newer generations or alternative options may become available in the future.
Key Reasons to Choose this Product
Excellent power efficiency and thermal performance for high-power applications
Robust and reliable design for industrial and automotive use cases
Wide operating temperature range of -55°C to 150°C
Surface-mount package for easy integration into power electronics systems
RoHS3 compliance and AEC-Q101 qualification for quality and safety assurance
