Manufacturer Part Number
BSC050NE2LSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC050NE2LSATMA1 is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
N-Channel FET type
Drain-to-Source Voltage (Vdss) of 25V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
On-state Resistance (Rds(on)) of 5mΩ @ 30A, 10V
Continuous Drain Current (Id) of 39A (Ta) and 58A (Tc)
Input Capacitance (Ciss) of 760pF @ 12V
Power Dissipation of 2.5W (Ta) and 28W (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
High current handling capability
Low on-state resistance for improved efficiency
Wide operating temperature range
Compact PowerTDFN package for efficient heat dissipation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Gate-to-Source Voltage (Vgs): ±20V
On-state Resistance (Rds(on)): 5mΩ @ 30A, 10V
Continuous Drain Current (Id): 39A (Ta), 58A (Tc)
Input Capacitance (Ciss): 760pF @ 12V
Power Dissipation: 2.5W (Ta), 28W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PG-TDSON-8-5)
Tape and Reel (TR) packaging
Application Areas
Power management circuits
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
Currently available
No indication of discontinuation or replacement
Several Key Reasons to Choose This Product
High current handling capability for demanding applications
Low on-state resistance for improved efficiency and reduced power losses
Wide operating temperature range for reliable performance in diverse environments
Compact PowerTDFN package for efficient heat dissipation and space-saving design
RoHS3 compliance for environmentally-friendly applications
