BSC014N06NSATMA1 - Infineon Technologies

Manufacturer Part Number

BSC014N06NSATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-Channel MOSFET transistor optimized for high-efficiency power conversion applications

Product Features and Performance

High-voltage, low on-resistance MOSFET designed for high-efficiency power conversion

Designed for high-density, high-frequency power conversion applications like DC-DC converters, inverters, and motor drives

Extremely low gate charge and fast switching for improved efficiency

High power density and low thermal resistance for compact designs

Product Advantages

Excellent performance-to-cost ratio

Industry-leading power density and efficiency

Robust and reliable design for long-term operation

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 1.45mΩ @ 50A, 10V

Continuous Drain Current (Id): 30A (Ta), 100A (Tc)

Input Capacitance (Ciss): 6500pF @ 30V

Power Dissipation: 2.5W (Ta), 156W (Tc)

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Robust design for high reliability in harsh environments

Compatibility

Suitable for surface mount assembly

Application Areas

High-efficiency power conversion in industrial, consumer, and automotive electronics

DC-DC converters, inverters, motor drives, and other power management applications

Product Lifecycle

Currently in production

No indication of discontinuation, with availability of replacement parts expected

Several Key Reasons to Choose This Product

Industry-leading performance and power density

Excellent efficiency and thermal management for compact designs

Robust and reliable design for long-term operation

Cost-effective solution for high-volume power conversion applications