Manufacturer Part Number
BSC014N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor optimized for high-efficiency power conversion applications
Product Features and Performance
High-voltage, low on-resistance MOSFET designed for high-efficiency power conversion
Designed for high-density, high-frequency power conversion applications like DC-DC converters, inverters, and motor drives
Extremely low gate charge and fast switching for improved efficiency
High power density and low thermal resistance for compact designs
Product Advantages
Excellent performance-to-cost ratio
Industry-leading power density and efficiency
Robust and reliable design for long-term operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 1.45mΩ @ 50A, 10V
Continuous Drain Current (Id): 30A (Ta), 100A (Tc)
Input Capacitance (Ciss): 6500pF @ 30V
Power Dissipation: 2.5W (Ta), 156W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Robust design for high reliability in harsh environments
Compatibility
Suitable for surface mount assembly
Application Areas
High-efficiency power conversion in industrial, consumer, and automotive electronics
DC-DC converters, inverters, motor drives, and other power management applications
Product Lifecycle
Currently in production
No indication of discontinuation, with availability of replacement parts expected
Several Key Reasons to Choose This Product
Industry-leading performance and power density
Excellent efficiency and thermal management for compact designs
Robust and reliable design for long-term operation
Cost-effective solution for high-volume power conversion applications
