Manufacturer Part Number
BSC014N04LSIATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and high power density
Product Features and Performance
Very low on-resistance for high efficiency
High current capability up to 100A
Low input capacitance for fast switching
Wide operating temperature range from -55°C to 150°C
Optimized for high-frequency and high-power applications
Product Advantages
Excellent thermal performance
Compact surface-mount package
Robust design for reliable operation
Optimized for high-efficiency power conversion
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 1.45mΩ @ 50A, 10V
Continuous Drain Current (Id): 31A (Ta), 100A (Tc)
Input Capacitance (Ciss): 4000pF @ 20V
Power Dissipation: 2.5W (Ta), 96W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and rugged applications
Compatibility
Suitable for a wide range of power conversion applications, including:
Switch-mode power supplies
Motor drives
Inverters
Class-D audio amplifiers
Application Areas
High-efficiency power conversion
Industrial and automotive electronics
Telecom and server power supplies
Renewable energy systems
Product Lifecycle
This product is currently in active production and widely available. There are no plans for discontinuation, and suitable replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent efficiency and power density due to very low on-resistance and high current capability
Fast switching and low gate charge for high-frequency operation
Robust design and wide operating temperature range for reliable performance in demanding applications
Compact surface-mount package for space-efficient board designs
RoHS3 compliance for environmentally-friendly applications
