Manufacturer Part Number
BSC012N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 60V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 1.2mΩ at 50A and 10V
Continuous Drain Current (Id) of 36A at 25°C (Ta) and 306A at 25°C (Tc)
Input Capacitance (Ciss) of 11,000pF at 30V
Maximum Power Dissipation of 214W at 25°C (Tc)
Operating Temperature Range of -55°C to 175°C
Product Advantages
Low on-state resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Suitable for high-frequency and high-power applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 3.3V at 147A
Gate Drive Voltage Range of 6V (max Rds(on)) to 10V (min Rds(on))
Gate Charge (Qg) of 143nC at 10V
Quality and Safety Features
RoHS3 compliant
Surface mount package (PG-TSON-8-3)
Compatibility
This MOSFET is designed for use in a wide range of power electronics applications, including:
Switch-mode power supplies
Motor drives
Inverters
Battery chargers
Application Areas
Industrial
Automotive
Renewable energy
Consumer electronics
Product Lifecycle
This product is an active, in-production device from Infineon Technologies. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent power efficiency and performance due to low on-state resistance
High current handling capability for demanding applications
Wide operating temperature range for versatile use
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
