Manufacturer Part Number
BSC010NE2LSIATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor suitable for a variety of power conversion and switching applications.
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 100A
Fast switching for high-frequency operation
Low gate charge for improved energy efficiency
Robust design for reliable operation
Product Advantages
Excellent power density and thermal performance
Optimized for low power loss and high efficiency
Suitable for high-frequency, high-current applications
Rugged and reliable design
Key Technical Parameters
Drain-source voltage (Vdss): 25V
On-resistance (Rds(on)): 1.05mΩ
Continuous drain current (Id): 38A (Ta), 100A (Tc)
Input capacitance (Ciss): 4200pF
Power dissipation: 2.5W (Ta), 96W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets high-quality manufacturing standards
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Power supplies
Motor drives
Power inverters
Switching regulators
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available upon request
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable design for long-term operation
Suitable for high-frequency, high-current applications
Optimized for low power loss and high thermal performance
RoHS3 compliance for environmental sustainability
