Manufacturer Part Number
BSC015NE2LS5IATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and advanced packaging for efficient power conversion and control applications.
Product Features and Performance
Extremely low on-resistance (RDS(on) = 1.5 mΩ) for high efficiency
High current capability (ID = 33 A at 25°C, 100 A at 100°C)
Low gate charge (Qg = 30 nC) for fast switching
Wide operating temperature range (-55°C to 150°C)
Robust design with high avalanche energy capability
Product Advantages
Excellent thermal performance
High power density
Fast switching
Reliable operation
Key Technical Parameters
Drain-Source Voltage (VDS): 25 V
Gate-Source Voltage (VGS): ±16 V
On-Resistance (RDS(on)): 1.5 mΩ
Continuous Drain Current (ID): 33 A at 25°C, 100 A at 100°C
Input Capacitance (Ciss): 2000 pF
Power Dissipation: 2.5 W at 25°C, 50 W at 100°C
Quality and Safety Features
RoHS3 compliant
Adheres to quality standards for reliable performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Telecom and server power
Automotive electronics
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may become available in the future as technology advances.
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current capability for demanding applications
Fast switching performance for improved system response
Robust design and wide operating temperature range for reliable operation
Compact and thermally efficient package for space-constrained designs
