Manufacturer Part Number
BSB280N15NZ3G
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 150V
Maximum Gate-Source Voltage (Vgs) of ±20V
Low On-Resistance (Rds(on)) of 28mΩ @ 30A, 10V
Continuous Drain Current (Id) of 9A (Ta) and 30A (Tc)
Input Capacitance (Ciss) of 1600pF @ 75V
Maximum Power Dissipation of 2.8W (Ta) and 57W (Tc)
Operating Temperature Range of -40°C to 150°C (TJ)
Product Advantages
Excellent power handling and efficiency
Compact DirectFET Isometric MX package
Suitable for a wide range of power management applications
Robust design and reliable performance
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 4V @ 60A
Drive Voltage Range: 10V (Max Rds(on), Min Rds(on))
Gate Charge (Qg) of 21nC @ 10V
Quality and Safety Features
Compliance with industry standards for safety and reliability
Rigorous testing and quality control measures
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High power handling and efficiency
Compact and reliable package design
Suitable for a wide range of power management applications
Robust and reliable performance under various operating conditions
