Manufacturer Part Number
BSB028N06NN3GXUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
60V Drain-Source Voltage
8mΩ On-Resistance
22A Continuous Drain Current at 25°C
90A Continuous Drain Current at 100°C
Low Gate Charge of 143nC
Wide Operating Temperature Range: -40°C to 150°C
Robust CanPAK M and MG-WDSON-2 Packages
Product Advantages
Excellent efficiency due to low on-resistance
High current capability
Compact package options
Wide temperature range
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±20V
Rds On (Max): 2.8mΩ @ 30A, 10V
Id (Continuous): 22A (Ta), 90A (Tc)
Ciss (Max): 12000pF @ 30V
Pd (Max): 2.2W (Ta), 78W (Tc)
Quality and Safety Features
ROHS3 Compliant
Reliable MOSFET technology
Compatibility
Surface mount design
Suitable for various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive power electronics
Product Lifecycle
Current product offering
Replacements and upgrades available as technology evolves
Key Reasons to Choose This Product
Excellent efficiency and power density
High current capability
Wide operating temperature range
Robust package options
Reliable performance
