Manufacturer Part Number
BSB165N15NZ3G
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching
Product Features and Performance
Very low on-resistance of 16.5 mOhm
High current capability up to 45A
Fast switching with low gate charge of 35 nC
Wide operating temperature range of -40°C to 150°C
Robust design with 150V drain-source voltage rating
Product Advantages
Efficient power conversion with low conduction and switching losses
Enables compact and high-density power electronics designs
Reliable operation in demanding applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 9A (Ta), 45A (Tc)
On-Resistance (Rds(on)): 16.5 mOhm @ 30A, 10V
Input Capacitance (Ciss): 2800 pF @ 75V
Power Dissipation: 2.8W (Ta), 78W (Tc)
Quality and Safety Features
Robust DirectFET packaging for enhanced thermal performance and reliability
Compliant with RoHS and REACH regulations for environmental safety
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Class-D audio amplifiers
Telecommunications equipment
Industrial automation and control
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Exceptional efficiency and power density enabling compact designs
Reliable and robust performance in challenging operating conditions
Proven Infineon quality and technology for long-term dependability
Versatile compatibility across various power electronics applications
