Manufacturer Part Number
BFP740FESDH6327
Manufacturer
Infineon Technologies
Introduction
High-performance NPN silicon bipolar RF transistor for applications up to 10 GHz.
Product Features and Performance
Extremely low noise figure
High gain up to 39 dB
Transition frequency of 47 GHz
Low collector-emitter saturation voltage
Optimized for high-frequency and high-gain applications
Product Advantages
Excellent RF performance
High reliability and stability
Compact surface-mount package
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Max: 160mW
Voltage Collector Emitter Breakdown (Max): 4.2V
Current Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency Transition: 47GHz
Gain: 39dB
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Quality and Safety Features
RoHS compliant
Reliable surface-mount package
Compatibility
Suitable for high-frequency and high-gain RF applications
Application Areas
Wireless communication systems
Radar systems
Test and measurement equipment
Satellite communications
Industrial and medical applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent RF performance with high gain and low noise figure
Compact surface-mount package for easy integration
Reliable and stable operation
Suitable for a wide range of high-frequency applications
