Manufacturer Part Number
BFP780H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-frequency NPN bipolar transistor for RF applications
Product Features and Performance
Optimized for high-frequency operation up to 3.5GHz
Low noise figure of 1.2dB to 2.4dB in the 900MHz to 3.5GHz frequency range
High power gain of 27dB
Collector-emitter breakdown voltage of 6.1V
Collector current up to 120mA
Suitable for surface mount applications
Product Advantages
Excellent RF performance
High reliability and stability
Compact surface mount package
Key Technical Parameters
Frequency Transition: 900MHz
Power Consumption: 600mW
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Reliable, industrial-grade design
Compatibility
Suitable for various RF and wireless communication applications
Application Areas
RF power amplifiers
Wireless communication systems
Radar systems
Test and measurement equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional RF performance with low noise and high gain
Compact and reliable surface mount package
Wide operating temperature range
Compliance with RoHS regulations for environmental responsibility
