Manufacturer Part Number
BFP740E6327
Manufacturer
Infineon Technologies
Introduction
High-frequency NPN bipolar transistor for RF applications
Product Features and Performance
Excellent noise performance
High transition frequency of 42 GHz
High current gain of 160 (min)
Low power dissipation of 160 mW
Product Advantages
Suitable for high-frequency amplifier and mixer applications
Ideal for use in wireless communication systems
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 4.7 V (max)
Collector Current: 30 mA (max)
Operating Temperature: 150°C (max junction temperature)
Noise Figure: 0.5 dB ~ 0.85 dB @ 1.8 GHz ~ 6 GHz
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Surface mount package (SC-82A, SOT-343)
Application Areas
RF amplifiers and mixers
Wireless communication systems
Radar and satellite communication
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Superior high-frequency performance
Excellent noise characteristics
Compact and efficient surface mount package
Proven reliability and quality
Suitable for a wide range of RF applications
