Manufacturer Part Number
BF799WE6327
Manufacturer
Infineon Technologies
Introduction
The BF799WE6327 is a high-frequency NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Operates at high frequencies up to 800 MHz
Low noise figure of 3 dB at 100 MHz
Collector-emitter breakdown voltage of 20 V
Collector current up to 35 mA
Power dissipation of 280 mW
Product Advantages
Suitable for various RF applications due to high frequency operation and low noise performance
Compact surface mount package for space-efficient design
Robust performance across wide temperature range up to 150°C
Key Technical Parameters
NPN transistor type
Minimum DC current gain (hFE) of 40 at 20 mA, 10 V
Operating temperature range up to 150°C
Compact SOT-323 package
Quality and Safety Features
Complies with RoHS directive (restriction of hazardous substances)
Compatibility
Suitable for surface mount applications
Application Areas
Radio frequency (RF) amplifiers
Mixers
Oscillators
Switches
General-purpose high-frequency applications
Product Lifecycle
The BF799WE6327 is an active product and not nearing discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Several Key Reasons to Choose This Product
High-frequency operation up to 800 MHz
Low noise performance with 3 dB noise figure at 100 MHz
Robust temperature performance up to 150°C
Compact surface mount package for space-efficient design
Suitable for a wide range of RF applications
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