Manufacturer Part Number
BF776H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-frequency NPN bipolar transistor
Suitable for use in RF applications
Product Features and Performance
Extremely high cutoff frequency of 46GHz
Low noise figure of 0.8dB to 1.3dB in the 1.8GHz to 6GHz frequency range
High current gain (hFE) of 180 at 30mA, 3V
High gain of 24dB
Low collector-emitter voltage of 4.7V
Power handling capability of 200mW
Product Advantages
Excellent high-frequency performance
Low noise characteristics
High current gain
Compact surface mount package
Key Technical Parameters
Operating temperature up to 150°C
Collector current (max): 50mA
Collector-emitter breakdown voltage: 4.7V
Quality and Safety Features
RoHS3 compliant
Reliable performance in industrial environments
Compatibility
Compatible with standard surface mount assembly processes
Application Areas
Suitable for use in RF circuits, amplifiers, and oscillators
Applicable in wireless communication systems, radar, and test and measurement equipment
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Exceptional high-frequency performance with low noise
Compact and reliable surface mount package
Proven track record in industrial and commercial applications
Wide availability and support from a leading semiconductor manufacturer
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