BF776H6327 - Infineon Technologies

Manufacturer Part Number

BF776H6327

Manufacturer

Infineon Technologies

Introduction

High-frequency NPN bipolar transistor for radio frequency (RF) applications

Product Features and Performance

Operates at high frequencies up to 46GHz

Provides high current gain of 180 at collector current of 30mA and collector-emitter voltage of 3V

Achieves low noise figure of 0.8dB to 1.3dB in the frequency range of 1.8GHz to 6GHz

Offers high power gain of 24dB

Product Advantages

Suitable for high-frequency RF applications

Excellent noise performance

High current gain

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 4.7V

Collector Current (Max): 50mA

Power Dissipation (Max): 200mW

Operating Temperature Range: -55°C to +150°C

Quality and Safety Features

RoHS compliance (status not specified)

Packaged in SC-82A, SOT-343 surface mount package

Compatibility

Compatible with high-frequency RF circuit designs

Application Areas

Suitable for use in RF amplifiers, oscillators, mixers, and other high-frequency circuit applications

Product Lifecycle

Current product offering, no indication of discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

Excellent high-frequency performance with transition frequency up to 46GHz

Low noise figure for improved signal-to-noise ratio in RF circuits

High current gain and power gain for efficient RF signal amplification

Compact surface mount package for space-constrained designs