Manufacturer Part Number
2ED020I12FAXUMA2
Manufacturer
Infineon Technologies
Introduction
The Infineon 2ED020I12FAXUMA2 is a high-performance gate driver module designed for a variety of power management applications. This device provides reliable and efficient driving of IGBT and N-/P-channel MOSFET power switches in half-bridge configurations.
Product Features and Performance
Independent half-bridge gate driver with 2 channels
High-side voltage up to 1200V
Peak output current of 2.4A for both source and sink
Fast rise and fall times of 30ns and 50ns respectively
Wide operating temperature range of -40°C to 150°C
Undervoltage lockout and crossover protection
36-pin BSSOP package with 32 leads
Product Advantages
Highly reliable and efficient power conversion
Optimized for IGBT and MOSFET power switches
Compact and space-saving package
Robust thermal and electrical performance
Key Reasons to Choose This Product
Proven performance in demanding power applications
Comprehensive protection features for enhanced system reliability
Seamless integration with a variety of power devices
Excellent thermal management capabilities
Quality and Safety Features
Rigorous quality control and testing
Compliance with industry safety standards
Robust protection against overcurrent, overvoltage, and overtemperature
Compatibility
The 2ED020I12FAXUMA2 is compatible with a wide range of IGBT and MOSFET power devices, making it suitable for a variety of power management applications.
Application Areas
Motor drives
Power inverters and converters
Switching power supplies
Industrial automation and control systems
Product Lifecycle
The 2ED020I12FAXUMA2 is an active product and not nearing discontinuation. Infineon offers several equivalent or alternative gate driver models, such as the 2ED300C17-F and 2ED300C17-S, which may provide similar or enhanced functionality. For the latest product information and availability, please contact our website's sales team.