2ED020I12FA - Infineon Technologies

Manufacturer Part Number

2ED020I12FA

Manufacturer

Infineon Technologies

Introduction

Infineon 2ED020I12FA is a dual-channel IGBT/MOSFET gate driver IC designed for high-power switching applications.

Product Features and Performance

Dual-channel independent gate driver

Capable of driving IGBT, N-Channel, and P-Channel MOSFET devices

High-side voltage up to 1200V

Peak output current of 2.4A source/sink

Rise/fall time of 30ns/50ns

Wide supply voltage range of 13V to 20V

Low input logic voltage of 1.5V to 3.5V

Operating temperature range of -40°C to 125°C

Product Advantages

Robust and reliable performance for high-power applications

Flexible configuration for various switch types

Fast switching speed for improved system efficiency

Wide operating voltage and temperature range

Key Technical Parameters

Supply Voltage: 13V to 20V

Input Logic Voltage: 1.5V to 3.5V

High-Side Voltage (Bootstrap): 1200V

Peak Output Current (Source/Sink): 2.4A

Rise/Fall Time: 30ns/50ns

Operating Temperature: -40°C to 125°C

Quality and Safety Features

Robust design for reliable operation

Thermal and overcurrent protection

Compatibility

Compatible with IGBT, N-Channel, and P-Channel MOSFET devices

Application Areas

Suitable for various high-power switching applications, such as motor drives, power converters, and industrial control systems

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Several Key Reasons to Choose This Product

Versatile gate driver capable of driving a wide range of power semiconductor devices.

High-speed switching performance for improved system efficiency.

Wide operating voltage and temperature range for use in demanding applications.

Robust design and built-in protection features for reliable operation.

Compatibility with various switch types, enabling flexible system design.