Manufacturer Part Number
2ED21824S06JXUMA1
Manufacturer
Infineon Technologies
Introduction
Power Management Integrated Circuit for gate driving applications
Product Features and Performance
Half-Bridge Synchronous Channel Configuration
Supports IGBT and N-Channel MOSFET Gate Driving
Supply Voltage Range from 10V to 20V
Logic Voltage Thresholds VIL 1.1V, VIH 1.7V
Peak Output Current 2.5A (Source), 2.5A (Sink)
Non-Inverting Input Type
High Side Voltage Capability up to 650V (Bootstrap)
Fast Rise and Fall Times of 15ns each
Operable in Temperature Range from -40°C to 125°C
Product Advantages
Optimized for High-Speed Switching
Highly Integrated with Minimal External Components Required
Robust Thermal Performance for Enhanced Reliability
High Voltage Tolerance Suitable for Demanding Environments
Key Technical Parameters
Single Driver Channel
Bootstrap High Side Voltage up to 650V
Logic Voltage Levels Compatible with Modern Microcontrollers
Surface Mountable 14-SOIC Package
Power Supply Requirements from 10V to 20V
Quality and Safety Features
Extended Temperature Range for Harsh Environments
Rigorous Infineon Qualification for High Reliability
Compatibility
For use with IGBTs and N-Channel MOSFETs
Compatible with a variety of Microcontroller Logic Levels
Application Areas
Motor Control Units
Power Supplies
Inverters
Automotive Electronics
Industrial Automation Systems
Product Lifecycle
Active Product Status
Continuously Manufactured and Supported by Infineon Technologies
Key Reasons to Choose This Product
High Integration Facilitates Compact Design
Adaptable to a Wide Range of High Voltage Applications
Infineon's Reputation for Reliable and Durable Components
Proven Performance in Power Management and Gate Driving Circuits
Ready Availability in Tape & Reel Packaging for Automated Assembly Processes
