2ED020I12-F - Infineon Technologies

Manufacturer Part Number

2ED020I12-F

Manufacturer

Infineon Technologies

Introduction

The 2ED020I12-F is an integrated circuit designed for power management, specifically as a gate driver for half-bridge configurations.

Product Features and Performance

Half-Bridge gate driver

Supports IGBT and N-Channel MOSFET gate types

Dual independent channels

Up to 1200V high side voltage capability with bootstrap

2A peak sink, 1A peak source output current

Requires 0V to 18V supply voltage

Inverting input type

Suitable for surface mount technology

Product Advantages

Capable of driving high voltage power devices

Provides robust and high performance for industrial applications

Independent channels offer flexible use cases

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Voltage - Supply: 0V ~ 18V

High Side Voltage - Max (Bootstrap): 1200V

Current - Peak Output (Source, Sink): 1A, 2A

Quality and Safety Features

Built-in protection features for safe operation (specifics needed)

Compatibility

Compatible with IGBT and N-channel MOSFET gates

Designed for 18-SOIC surface mount

Application Areas

Industrial motor drives

Power supplies

Renewable energy systems

Power converters

Product Lifecycle

Status: Obsolete

Replacement or upgrades may be available (consult with manufacturer's datasheets or technical support)

Several Key Reasons to Choose This Product

High voltage handling up to 1200V suitable for various industrial applications

Dual independent driver channels provide design flexibility

Able to provide robust driving capabilities with 2A sink and 1A source current

Infineon Technologies is a reputable manufacturer in the semiconductor space for power management solutions

Designed for easy integration into systems using surface mount technology (SMT)