Manufacturer Part Number
SGF5N150UFTU
Manufacturer
onsemi
Introduction
IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Product Features and Performance
High voltage capability up to 1500V
High current rating up to 10A
Low on-state voltage drop (Vce(on))
Fast switching speed with typical turn-on/off times of 10ns/30ns
Low switching energy loss
Product Advantages
Robust and reliable performance
Suitable for high power applications
Efficient power conversion and control
Key Technical Parameters
Collector-Emitter Voltage: 1500V
Collector Current: 10A
On-state Voltage Drop: 5.5V @ 10V, 5A
Gate Charge: 30nC
Pulsed Collector Current: 20A
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Through-hole mounting (TO-3PF package)
Application Areas
Power conversion and control in industrial, automotive, and renewable energy systems
Motor drives, inverters, and other high power applications
Product Lifecycle
Active and available for purchase
Replacement and upgrade options may be available
Key Reasons to Choose This Product
High voltage and current capabilities for demanding power applications
Efficient power conversion with low on-state voltage and switching losses
Reliable and robust performance in wide temperature range
Compatibility with standard through-hole mounting
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