PZT751T1G - onsemi

Manufacturer Part Number

PZT751T1G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT) in a surface-mount package.

Product Features and Performance

High power handling capability up to 800 mW

High collector-emitter breakdown voltage of 60 V

High collector current capability of up to 2 A

High DC current gain of at least 75 at 1 A, 2 V

High transition frequency of 75 MHz

Suitable for a wide range of power amplifier and switching applications

Product Advantages

Compact surface-mount package

Robust construction for reliable operation

Good thermal dissipation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60 V

Collector Current (IC): 2 A

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 500 mV @ 200 mA, 2 A

DC Current Gain (hFE): 75 @ 1 A, 2 V

Transition Frequency (fT): 75 MHz

Quality and Safety Features

RoHS3 compliant

High-reliability construction

Compatibility

Compatible with a wide range of power amplifier and switching circuit designs

Application Areas

Power amplifiers

Switching circuits

Power supplies

Industrial controls

Product Lifecycle

This product is currently in production and readily available.

Replacements or upgrades may be available in the future, but the current model is still being actively supported.

Key Reasons to Choose This Product

High power handling capability for demanding applications

Excellent electrical performance with high voltage, current, and frequency ratings

Compact and reliable surface-mount package

Compatibility with a wide range of circuit designs

Compliance with RoHS3 environmental standards