PZT751T1 - onsemi

Manufacturer Part Number

PZT751T1

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

PNP transistor

Product Features and Performance

Power rating: 800 mW

Collector-Emitter Breakdown Voltage (max): 60 V

Collector Current (max): 2 A

Collector Cutoff Current (max): 100 nA

Collector-Emitter Saturation Voltage (max): 500 mV @ 200 mA, 2 A

DC Current Gain (min): 75 @ 1 A, 2 V

Transition Frequency: 75 MHz

Product Advantages

High power capability

Suitable for high-current applications

Good switching and amplification performance

Key Technical Parameters

Transistor Type: PNP

Mounting Type: Surface Mount

Package: TO-261-4, TO-261AA (SOT-223)

Quality and Safety Features

RoHS non-compliant

Compatibility

Can be used in various electronic circuits and applications

Application Areas

Power amplifiers

Switching circuits

Driver circuits

General-purpose amplification and switching

Product Lifecycle

This is an existing product, not nearing discontinuation.

Replacement or upgrade options may be available.

Key Reasons to Choose This Product

High power handling capability

Suitable for high-current applications

Good switching and amplification performance

Widely compatible with various electronic circuits and applications