Manufacturer Part Number
PZT651T1G
Manufacturer
onsemi
Introduction
The PZT651T1G is a high-performance NPN bipolar junction transistor (BJT) suitable for a variety of power amplifier and switching applications.
Product Features and Performance
High collector current rating of 2A
Wide collector-emitter breakdown voltage of 60V
High DC current gain of at least 75 at 1A, 2V
High transition frequency of 75MHz
Low collector-emitter saturation voltage of 500mV at 200mA, 2A
Compact SOT-223 (TO-261) surface mount package
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling capability
Fast switching speed
High current gain
Small, space-saving package
Wide operating temperature range
Key Technical Parameters
Power Rating: 800mW
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 2A
Collector Cutoff Current: 100nA
DC Current Gain: Min 75 @ 1A, 2V
Transition Frequency: 75MHz
Collector-Emitter Saturation Voltage: 500mV @ 200mA, 2A
Quality and Safety Features
RoHS3 compliant
Reliable performance in a wide range of applications
Compatibility
Compatible with various surface mount circuit board designs
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Motor controls
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement parts and upgrades available
Key Reasons to Choose This Product
High power handling and switching capability
Compact, space-saving package
Wide operating temperature range
Excellent electrical characteristics for reliable performance
RoHS3 compliance for environmental safety
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