Manufacturer Part Number
NVMFS3D0P04M8LT1G
Manufacturer
onsemi
Introduction
High-performance P-channel enhancement-mode MOSFET for automotive and industrial applications
Product Features and Performance
Rated for up to 40V drain-to-source voltage
Low on-resistance of 2.7 mOhm
Continuous drain current up to 28A (at 25°C ambient temperature) or 183A (at 100°C case temperature)
Fast switching and low gate charge for efficient operation
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency and thermal performance
Robust design for harsh automotive and industrial environments
Optimized for fast switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 40V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.7 mOhm
Continuous drain current (Id): 28A (at 25°C), 183A (at 100°C)
Input capacitance (Ciss): 5,827 pF
Power dissipation: 3.9W (at 25°C), 171W (at 100°C)
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Motor drives
Power supplies
Inverters
Battery management systems
Industrial automation and control
Product Lifecycle
Current production, no discontinuation planned
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Robust design for harsh environments
Fast switching and low gate charge for efficient operation
Wide operating temperature range of -55°C to 175°C
AEC-Q101 qualification for automotive applications
RoHS3 compliance for environmental friendliness