Manufacturer Part Number
NVMFD5C668NLT1G
Manufacturer
onsemi
Introduction
High-performance, dual N-channel enhancement-mode power MOSFET in a power-efficient 8-PowerTDFN package
Product Features and Performance
Optimized for automotive and industrial applications
Low on-resistance and high current handling capability
Fast switching speed and low gate charge
Wide operating temperature range of -55°C to 175°C
Product Advantages
Improved thermal performance and power density
Enhanced reliability and robustness
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
On-Resistance (RDS(on)): 6.5mΩ @ 20A, 10V
Continuous Drain Current (ID): 15.5A (Ta), 68A (Tc)
Input Capacitance (Ciss): 1440pF @ 25V
Gate Threshold Voltage (VGS(th)): 2V @ 50A
Gate Charge (Qg): 21.3nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for various automotive and industrial applications
Application Areas
Power conversion and control circuits
Motor drives
Power management systems
Automotive electronics
Product Lifecycle
Current and actively supported product
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High performance and efficiency for demanding applications
Robust and reliable design for automotive and industrial use
Optimized thermal management and power density
Wide operating temperature range for versatile applications