Manufacturer Part Number
NVMFS014P04M8LT1G
Manufacturer
onsemi
Introduction
High-performance P-channel MOSFET for automotive and industrial applications
Product Features and Performance
Low on-resistance (Rds(on)) of 13.8 mΩ
High continuous drain current (Id) of 12.5 A (Ta) and 52.1 A (Tc)
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 1734 pF
Low gate charge (Qg) of 26.5 nC
AEC-Q101 qualified for automotive applications
Product Advantages
Excellent thermal management with low thermal resistance
High efficiency and low power dissipation
Suitable for various automotive and industrial applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 13.8 mΩ @ 15 A, 10 V
Continuous Drain Current (Id): 12.5 A (Ta), 52.1 A (Tc)
Input Capacitance (Ciss): 1734 pF @ 20 V
Power Dissipation (Max): 3.6 W (Ta), 60 W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount package (5-DFN, 8-PowerTDFN)
Compatible with various automotive and industrial systems
Application Areas
Automotive applications (engine control, transmission, fuel injection, etc.)
Industrial applications (motor drives, power supplies, etc.)
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and efficiency
High current capability and low on-resistance
Wide operating temperature range and AEC-Q101 qualification
Compact surface mount package for space-constrained designs
Proven reliability and compatibility with automotive and industrial systems