Manufacturer Part Number
NVMFD5C462NLT1G
Manufacturer
onsemi
Introduction
This is a dual N-channel MOSFET transistor from onsemi, designed for automotive and other high-power applications.
Product Features and Performance
40V drain-source voltage rating
Very low on-resistance of 4.7mOhm @ 10A, 10V
Continuous drain current of 18A at 25°C ambient, 84A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 1300pF @ 25V
Low gate charge of 11nC @ 4.5V
Dual-channel configuration in an 8-pin PowerTDFN package
Product Advantages
Efficient power handling in a compact package
Suitable for high-power automotive and industrial applications
Excellent thermal performance and reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 4.7mOhm @ 10A, 10V
Continuous Drain Current (Id): 18A @ 25°C (Ta), 84A @ 25°C (Tc)
Input Capacitance (Ciss): 1300pF @ 25V
Gate Threshold Voltage (Vgs(th)): 2.2V @ 40A
Gate Charge (Qg): 11nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
This MOSFET is compatible with a wide range of automotive and industrial applications that require high-power switching and control.
Application Areas
Automotive electronics (e.g., engine control, power steering, transmission control)
Industrial motor drives and power conversion
Switching power supplies
General-purpose high-power switching applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent power handling and efficiency in a compact package
Reliable and robust performance in high-temperature and high-current applications
Suitable for a wide range of automotive and industrial use cases
Backed by onsemi's reputation for quality and innovation in power semiconductor solutions