Manufacturer Part Number
NVMFD5877NLT3G
Manufacturer
onsemi
Introduction
This is a dual N-Channel MOSFET device from onsemi's automotive-grade NVMFD5877 series.
Product Features and Performance
Operates in the temperature range of -55°C to 175°C
Supports a maximum power dissipation of 3.2W
Offers a low on-resistance (RDS(on)) of 39mΩ at 7.5A and 10V
Features a logic-level gate with a maximum threshold voltage (VGS(th)) of 3V at 250μA
Exhibits a maximum input capacitance (Ciss) of 540pF at 25V
Requires a maximum gate charge (Qg) of 20nC at 10V
Product Advantages
Automotive-qualified to AEC-Q101 standard
Compact 8-pin DFN (5x6) dual-flag (SO8FL-Dual) package
Suitable for space-constrained applications
Reliable performance in harsh automotive environments
Key Technical Parameters
60V drain-to-source voltage (VDS)
6A continuous drain current (ID) at 25°C
2 N-Channel MOSFET configuration
Quality and Safety Features
RoHS3 compliant
Designed for automotive and industrial applications
Compatibility
Compatible with various automotive and industrial systems that require dual N-Channel MOSFET devices
Application Areas
Automotive electronics, such as motor control, power management, and lighting systems
Industrial control and power conversion applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from onsemi's product portfolio.
Key Reasons to Choose This Product
Reliable automotive-grade performance in a compact package
Low on-resistance for efficient power switching
Wide operating temperature range suitable for harsh environments
Automotive qualification to AEC-Q101 standard
Compact and space-saving design for versatile applications
