Manufacturer Part Number
NVMFD5875NLT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel Dual MOSFET Transistor Array
Product Features and Performance
Automotive-grade device qualified to AEC-Q101 standard
Operating temperature range: -55°C to 175°C
Power dissipation up to 3.2W
Low on-resistance (RDS(on)) of 33mΩ at 7.5A and 10V
Fast switching performance with low input capacitance (Ciss) of 540pF at 25V
Logic-level gate drive (Vgs(th) ≤ 3V at 250μA)
Low gate charge (Qg) of 20nC at 10V
Product Advantages
Reliable automotive-grade design
Efficient power handling with low losses
Suitable for high-speed switching applications
Ease of use with logic-level gate drive
Key Technical Parameters
2 N-Channel MOSFET Transistors in Dual Configuration
60V Drain-to-Source Voltage (Vdss)
7A Continuous Drain Current (ID) at 25°C
Surface Mount Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Compatibility
Suitable for a wide range of automotive and industrial applications requiring dual N-Channel MOSFET switches
Application Areas
Automotive systems (e.g., motor control, lighting, power management)
Industrial control and automation
Power supplies and converters
General-purpose switching and driver circuits
Product Lifecycle
Current production status, no indication of discontinuation
Replacements and upgrades may be available from onsemi's product portfolio
Key Reasons to Choose This Product
Reliable automotive-grade performance
Efficient power handling and low on-resistance
Flexible logic-level gate drive for easy integration
Compact and space-saving surface mount package
Broad compatibility for diverse applications
