Manufacturer Part Number
NTTFS4C06NTAG
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device - a single N-channel MOSFET transistor.
Product Features and Performance
30V drain-source voltage rating
-55°C to 150°C operating temperature range
2mΩ maximum on-resistance at 30A, 10V
11A continuous drain current at 25°C ambient temperature
67A continuous drain current at 25°C case temperature
3366pF maximum input capacitance at 15V
810mW power dissipation at 25°C ambient, 31W at 25°C case
Product Advantages
Compact 8-WDFN (3.3x3.3) surface mount package
Low on-resistance for efficient power switching
Wide operating temperature range
High current handling capability
Key Technical Parameters
30V drain-source voltage
±20V gate-source voltage
2mΩ maximum on-resistance
11A/67A continuous drain current
3366pF maximum input capacitance
810mW/31W power dissipation
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
This MOSFET is a direct replacement for similar N-channel transistors in power switching applications.
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Automotive electronics
Product Lifecycle
This product is an active and widely available part. No discontinuation or replacement is planned at this time.
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly use
AEC-Q101 qualification for automotive and industrial reliability
