Manufacturer Part Number
NTTFS4C25NTAG
Manufacturer
onsemi
Introduction
The NTTFS4C25NTAG is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
N-Channel MOSFET transistor
30V drain-to-source voltage
Maximum gate-to-source voltage of ±20V
Low on-resistance of 17mOhm @ 10A, 10V
Continuous drain current of 5A at 25°C ambient, 27A at case temperature
Input capacitance of 500pF @ 15V
Maximum power dissipation of 690mW at 25°C ambient, 20.2W at case temperature
Gate threshold voltage of 2.2V @ 250A
Gate drive voltage range of 4.5V to 10V
Maximum gate charge of 10.3nC @ 10V
Product Advantages
Excellent on-resistance performance
High current capability
Wide operating temperature range
Surface mount packaging for compact design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 17mOhm
Continuous Drain Current (Id): 5A (Ta), 27A (Tc)
Input Capacitance (Ciss): 500pF
Power Dissipation (Ptot): 690mW (Ta), 20.2W (Tc)
Gate Threshold Voltage (Vgs(th)): 2.2V
Gate Charge (Qg): 10.3nC
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C
Compatibility
Surface mount 8-WDFN (3.3x3.3) package
Application Areas
Power management
Motor control
Switching circuits
Automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options available
Key Reasons to Choose
Excellent on-resistance performance for high efficiency
High current capability for demanding applications
Wide operating temperature range for reliability
Surface mount packaging for compact design
RoHS3 compliance for environmental responsibility
