Manufacturer Part Number
NTTFS4C02NTAG
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device - a single N-channel MOSFET transistor.
Product Features and Performance
30V drain-to-source voltage rating
Maximum gate-to-source voltage of ±20V
Very low on-resistance of 2.25mΩ at 20A, 10V
High continuous drain current of 170A at 25°C case temperature
High input capacitance of 2980pF at 15V
Maximum power dissipation of 91W at 25°C case temperature
Threshold voltage of 2.2V at 250A drain current
Product Advantages
Excellent performance in high current and high power applications
Compact surface mount package
Suitable for high frequency switching applications
Key Technical Parameters
MOSFET technology
N-channel FET type
8-WDFN (3.3x3.3) surface mount package
Tape and reel packaging
Quality and Safety Features
RoHS3 compliant
Compatibility
This MOSFET is suitable for a wide range of power electronics and high current switching applications.
Application Areas
Motor drives
Power supplies
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
This product is an active and commonly used MOSFET device. Replacements and upgrades are readily available.
Key Reasons to Choose This Product
Excellent power handling capability with low on-resistance
High current rating for efficient power switching
Compact and thermally efficient surface mount package
Proven reliability and performance in numerous applications
