Manufacturer Part Number
NTS4173PT1G
Manufacturer
onsemi
Introduction
The NTS4173PT1G is a P-channel enhancement-mode MOSFET transistor from onsemi, designed for power management and control applications.
Product Features and Performance
P-channel enhancement-mode MOSFET
30V drain-source voltage
±12V gate-source voltage
150mΩ maximum on-resistance at 1.2A, 10V
2A continuous drain current at 25°C
430pF maximum input capacitance at 15V
290mW maximum power dissipation at 25°C
Product Advantages
Low on-resistance for high efficiency
High voltage and current handling capabilities
Surface mount package for compact designs
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 150mΩ @ 1.2A, 10V
Drain Current (Id): 1.2A @ 25°C
Input Capacitance (Ciss): 430pF @ 15V
Power Dissipation (Pd): 290mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount SC-70-3 (SOT323) package
Application Areas
Power management circuits
Motor control
Switching applications
General purpose power control
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact surface mount package
Wide operating temperature range
Reliable and durable construction
Suitable for a variety of power management and control applications