NTS4101PT1G - onsemi

Manufacturer Part Number

NTS4101PT1G

Manufacturer

onsemi

Introduction

Single P-Channel MOSFET Transistor

Product Features and Performance

Drain-to-Source Voltage (Vdss) up to 20V

Continuous Drain Current (Id) of 1.37A at 25°C

Extremely low On-Resistance (Rds(on)) of 120mΩ at 1A, 4.5V

Compact SC-70-3 (SOT323) surface mount package

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power management with low on-resistance

Compact and space-saving design

Robust performance over wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 120mΩ @ 1A, 4.5V

Input Capacitance (Ciss): 840pF @ 20V

Power Dissipation (Max): 329mW

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

Readily compatible with common electronic systems and circuits

Application Areas

Power management circuits

Motor control

Switching applications

General-purpose electronic devices

Product Lifecycle

Currently in production

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

Excellent power efficiency with low on-resistance

Compact and space-saving design

Wide operating temperature range for reliable performance

Compliant with RoHS3 safety standards

Suitable for a variety of power management and switching applications