NTS4001NT1G - onsemi

Manufacturer Part Number

NTS4001NT1G

Manufacturer

onsemi

Introduction

The NTS4001NT1G is a N-channel enhancement mode field effect transistor (FET) from onsemi. It is suitable for a wide range of switching and amplifier applications.

Product Features and Performance

N-channel enhancement mode MOSFET

Low on-resistance of 1.5 Ohm @ 10 mA, 4V

High drain current capability of 270 mA at 25°C

Low input capacitance of 33 pF @ 5V

Wide operating temperature range of -55°C to 150°C

Low gate charge of 1.3 nC @ 5V

Product Advantages

Excellent switching performance

High efficiency and low power dissipation

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate to Source Voltage (Vgs Max): ±20 V

Drain Current (Id): 270 mA

On-Resistance (Rds(on)): 1.5 Ohm

Input Capacitance (Ciss): 33 pF

Power Dissipation (Pd): 330 mW

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Surface mount package (SC-70-3/SOT-323)

Tape and reel packaging

Application Areas

Switching circuits

Amplifier circuits

General purpose switching and control applications

Product Lifecycle

This product is an active and available part from onsemi.

No known plans for discontinuation.

Key Reasons to Choose This Product

Excellent switching performance and efficiency

Wide operating temperature range

Small and compatible surface mount package

RoHS3 compliant for environmental sustainability