Manufacturer Part Number
NTR4171PT1G
Manufacturer
onsemi
Introduction
The NTR4171PT1G is a P-channel power MOSFET transistor from onsemi, designed for use in a variety of electronic applications.
Product Features and Performance
30V drain to source voltage (Vdss)
Maximum gate-source voltage (Vgs) of ±12V
Low on-resistance (Rds(on)) of 75mΩ at 2.2A, 10V
Continuous drain current (Id) of 2.2A at 25°C
Input capacitance (Ciss) of 720pF at 15V
Power dissipation (Pd) of 480mW at 25°C
Product Advantages
Excellent switching performance
Low on-resistance for efficient power handling
Wide operating temperature range of -55°C to 150°C
Compact surface mount SOT-23-3 package
Key Technical Parameters
MOSFET technology
P-channel FET type
Vgs(th) of 1.4V at 250μA
Gate charge (Qg) of 15.6nC at 10V
Quality and Safety Features
RoHS3 compliant
Meets relevant safety and quality standards
Compatibility
This device is compatible with a wide range of electronic circuits and systems that require a P-channel power MOSFET.
Application Areas
Power management circuits
Motor control applications
Switching power supplies
General-purpose electronic circuits
Product Lifecycle
The NTR4171PT1G is an active product, and onsemi continues to offer this device as part of their current product portfolio. Replacement or upgrade options may be available, but the specific details would need to be confirmed with the manufacturer.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and wide operating temperature range
Compact and efficient surface mount packaging
Robust design and compliance with relevant safety and quality standards
Supported by onsemi, a reputable and established semiconductor manufacturer