Manufacturer Part Number
NTR4101PT1G
Manufacturer
onsemi
Introduction
The NTR4101PT1G is a P-channel MOSFET transistor from onsemi, designed for a variety of applications.
Product Features and Performance
P-channel MOSFET transistor
Drain-to-source voltage up to 20V
Continuous drain current up to 1.8A at 25°C
On-resistance as low as 85mΩ
Input capacitance of 675pF at 10V
Power dissipation up to 420mW
Product Advantages
Compact SOT-23-3 (TO-236) package
Wide operating temperature range of -55°C to 150°C
Low on-resistance for efficient power handling
Suitable for high-frequency and high-power applications
Key Technical Parameters
Drain-to-source voltage (VDS): 20V
Gate-to-source voltage (VGS): ±8V
Continuous drain current (ID): 1.8A at 25°C
On-resistance (RDS(on)): 85mΩ at 1.6A, 4.5V
Input capacitance (Ciss): 675pF at 10V
Power dissipation (PD): 420mW
Quality and Safety Features
RoHS3 compliant
Suitable for tape and reel packaging
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power management circuits
Switching applications
Battery-powered devices
LED drivers
Audio amplifiers
Product Lifecycle
The NTR4101PT1G is an active product, with no information available on discontinuation or replacement.
Key Reasons to Choose This Product
High power handling capability with low on-resistance
Compact and easy-to-use SOT-23-3 (TO-236) package
Wide operating temperature range for versatile applications
Suitable for high-frequency and high-power switching applications
RoHS3 compliance for environmentally-friendly use
NTR4101PTAMI Semiconductor/onsemi
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