NTR4101PT1G - onsemi

Manufacturer Part Number

NTR4101PT1G

Manufacturer

onsemi

Introduction

The NTR4101PT1G is a P-channel MOSFET transistor from onsemi, designed for a variety of applications.

Product Features and Performance

P-channel MOSFET transistor

Drain-to-source voltage up to 20V

Continuous drain current up to 1.8A at 25°C

On-resistance as low as 85mΩ

Input capacitance of 675pF at 10V

Power dissipation up to 420mW

Product Advantages

Compact SOT-23-3 (TO-236) package

Wide operating temperature range of -55°C to 150°C

Low on-resistance for efficient power handling

Suitable for high-frequency and high-power applications

Key Technical Parameters

Drain-to-source voltage (VDS): 20V

Gate-to-source voltage (VGS): ±8V

Continuous drain current (ID): 1.8A at 25°C

On-resistance (RDS(on)): 85mΩ at 1.6A, 4.5V

Input capacitance (Ciss): 675pF at 10V

Power dissipation (PD): 420mW

Quality and Safety Features

RoHS3 compliant

Suitable for tape and reel packaging

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power management circuits

Switching applications

Battery-powered devices

LED drivers

Audio amplifiers

Product Lifecycle

The NTR4101PT1G is an active product, with no information available on discontinuation or replacement.

Key Reasons to Choose This Product

High power handling capability with low on-resistance

Compact and easy-to-use SOT-23-3 (TO-236) package

Wide operating temperature range for versatile applications

Suitable for high-frequency and high-power switching applications

RoHS3 compliance for environmentally-friendly use