Manufacturer Part Number
NTR4101PT1H
Manufacturer
onsemi
Introduction
The NTR4101PT1H is a P-channel MOSFET transistor from onsemi, suitable for a variety of low-power applications.
Product Features and Performance
P-channel MOSFET design
Operating temperature range of -55°C to 150°C
Drain-to-source voltage (Vdss) of 20V
Maximum gate-to-source voltage (Vgs) of ±8V
Low on-resistance (Rds(on)) of 85mΩ @ 1.6A, 4.5V
Continuous drain current (Id) of 1.8A at 25°C
Input capacitance (Ciss) of 675pF @ 10V
Power dissipation of 420mW at Ta
Product Advantages
High efficiency and low power loss
Compact surface-mount SOT-23-3 package
Wide operating temperature range
Suitable for various low-power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Gate-to-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 85mΩ @ 1.6A, 4.5V
Continuous drain current (Id): 1.8A at 25°C
Input capacitance (Ciss): 675pF @ 10V
Power dissipation: 420mW at Ta
Quality and Safety Features
RoHS3 compliant
Suitable for surface-mount applications
Compatibility
The NTR4101PT1H is a direct replacement for numerous other P-channel MOSFET transistors in similar packages and with similar specifications.
Application Areas
Low-power electronics
Power management circuits
Switching applications
General-purpose amplifier and driver circuits
Product Lifecycle
The NTR4101PT1H is an active product and not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Excellent efficiency and low power loss
Compact surface-mount package
Wide operating temperature range
Suitable for a variety of low-power applications
RoHS3 compliance for environmental friendliness
Availability of replacement and upgrade options